By Hadis Morkoç
The 3 volumes of this instruction manual deal with the basics, know-how and nanotechnology of nitride semiconductors with a rare readability and intensity. They current all of the useful fundamentals of semiconductor and gadget physics and engineering including an in depth reference part. quantity 2 addresses and optical homes of nitride fabrics. It contains semiconductor steel contacts, impurity and provider concentrations, and service shipping in semiconductors.
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Extra info for Handbook of Nitride Semiconductors and Devices, Volume 2: Electronic and Optical Processes in Nitrides
Sample text
Similarly, the density of current flowing from the metal to the semiconductor is proportional to the product of the transmission coefficient, the unoccupation probability in the semiconductor, and the occupation probability in the metal is Jm ! s AÃ T ¼ À k qf ðB f m TðxÞð1 À f s Þ dx: 0 1) The occupation probability depicts the likelihood that a state is occupied by an electron, and one minus the occupation probability exhibits that to be free of electrons. 13 for the Ni/GaN contact [8]. 16 but now for the field emission current are defined as qf À qV bm ¼ B ; ð1:41Þ E 00 1 4ðfB À VÞ ; ð1:42Þ cm ¼ log 2E 00 Vn and 1 f m ¼ E 00 qV n : 4 ð1:43Þ Padovani and Stratton [7] presented an analytical expression for the forward current for direct tunneling as qV ; ð1:44Þ J FE ¼ J SFE exp E 00 and J SFE ¼ 2pAÃ T 2 E 00 À qfB h n oi h n oi exp : pkT kT kT log 2 ðfBVÀn VÞ log 2 fBVÀn V sin 2E 00 ð1:45Þ For the reverse-bias case, the parameters bm, cm, and fm are defined as " pffiffiffiffiffiffiffiffi pffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffi# qfB þ qfB À qV 1 pffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffi pffiffiffiffiffiffiffiffiffiffiffiffi bm ¼ ; qfB ðqfB À qVÞ þ qV log E 00 À qV cm ¼ 1 log E 00 pffiffiffiffiffiffiffiffi pffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffi qfB þ qfB À qV pffiffiffiffiffiffiffiffiffiffiffiffi ; À qV ð1:46Þ ð1:47Þ and fm ¼ À 1 E 00 E: 4 ð1:48Þ The above parameters, however, are not easily traceable in terms of experiments.
However, it is reasonable to assume, and there is some evidence for this, which is discussed in Volume 1, Chapter 4, that regions of the semiconductor containing extended defects also have point defects. If so, correlation between the I–V performance and the presence or absence of extended defects could be made, as has been attempted by Shiojima and Suemitsu [16]. The authors used a combination of submicrometer-sized Schottky dot array on the surface and conductive atomic force microscopy (CAFM).
18 Calculated (a) forward and (b) reverse I–V–T characteristics for Pt/GaN contact. The dashed lines in (a) represent the thermionic emission model only [8]. 19 Schematic band diagram facilitating the qualitative description of plateaus observed in the forward I–V characteristics of some of the devices [8]. characteristics of Schottky barriers on GaN. It should also be mentioned that the surface of GaN is not completely inert [15], and any trap whose energy lies between the conduction band of the n-type semiconductor and the Fermi level in the metal would participate in this process.